Simulation study demonstrates accelerated mixed-mode switching analysis in lifetime-engineered silicon power diodes, indicating that analytical IGBT models bypass slow finite-element methods.
TCAD simulations of the switching of power diodes are essential in the development process. Power diodes are optimized structurally to be compliant with the specifications required by the targeted applications. For silicon power diodes, carrier lifetime engineering is performed to modify the trade-off between the forward voltage drop (Vf) and the reverse recovery charges (Qrr). To precisely simulate the switching characteristics of the diode, the test circuit needs to be accurately modeled in the simulator. The industry standard for switching test circuits is the Double Pulse Test bench (DPT). It is essential to accurately model the power transistor in the test bench which is often an IGBT or a MOSFET. A finite element analysis (FEA) model of the transistor is ideal but is not necessarily available and increases simulation time drastically. This paper demonstrates that a simple analytical approach to modeling the characteristics of an IGBT is sufficient to perform mixed mode switching simulations of a lifetime engineered silicon power diodes and reduces simulation time.
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Stephen et al. (2026) studied this question.
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