Carrier transport in Si Schottky diodes is analysed. A novel model for the recombination velocity suitable both for low and high biases has been derived and compared with previous models. The influence of the boundary condition on simulation results was found to be more significant for C-V than for I-V characteristics.
No takes yet. Share an insight, caveat, or question.
Shibkov et al. (1992) studied this question.
Synapse has enriched 5 related papers. Consider them for comparative context: