Influence of Substrate Preparation on the Morphology of GaSb Films Grown by Molecular Beam Epitaxy

The chemical etching of (100)‐oriented substrate by several different treatments has been studied. The morphology of the MBE‐grown films strongly depends on the substrate preparation prior to epitaxial growth. It is shown that some defects which originate at the substrate propagate to the surface of the films, in case of the improper chemical treatment, and degrade the morphology of the films. The excellent surface morphology of the film could be obtained reproducibly by treating the substrate with and subsequent solutions.