March 5, 1990Applied Physics Letters
Evidence for the existence of a negatively charged hydrogen species in plasma-treated n -type Si
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Implication
Experimental analysis demonstrates unidirectional drift of negatively charged hydrogen in reverse-biased n-type silicon diodes, indicating the presence of a hydrogen acceptor level.
Key Points
- To investigate the charge state and electric-field-induced redistribution of donor-passivating hydrogen species in plasma-treated n-type silicon.
- Fabricated Au/n-Si Schottky diodes and hydrogenated or deuterated them via exposure to a low-frequency plasma discharge.
- Applied a reverse bias to drive mobile passivating species across the diode depletion region.
- Measured deuterium redistribution profiles using secondary-ion mass spectrometry (SIMS).
- Observed unidirectional drift of donor-passivating hydrogen under the depletion-region electric field.
- Confirmed via SIMS profiling that the migrating passivating species carries a negative electrical charge.
- Demonstrated behavior consistent with a hydrogen acceptor level in n-type silicon, analogous to positively charged hydrogen donors in p-type silicon.
Cite This Study
Tavendale et al. (1990) studied this question.