Monte Carlo algorithm for hot phonons in polar semiconductors

We present a novel ensemble Monte Carlo procedure for the study of electron and phonon dynamics during the relaxation of photoexcited hot carriers. For the first time hot-electron and hot-phonon effects are included together in the same Monte Carlo simulation. The algorithm is applied to a simplified model of GaAs, consisting of one-type carriers (electrons) in a two-valley system (L and Γ valleys). The buildup of the phonon population on a picosecond scale is monitored, in parallel with the cooling of the electron distribution. As expected, the presence of nonequilibrium phonons is found to slow down the electron relaxation.