An experimental study of the current gain obtained in GaAs/Al/sub x/Ga/sub 1-x/As p-n-p heterojunction bipolar transistors fabricated from organometallic vapor-phase-epitaxial (OMVPE) material is reported. The structures studied included an abrupt base-emitter junction without a base spacer layer and two other structures with a 100-AA undoped base spacer layer with either an abrupt or a linearly graded base emitter junction. Analysis of current gain in these devices indicates that surface recombination dominates the base current and that an undoped base spacer layer is not needed.>
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Lyon et al. (1988) studied this question.
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