High-performance p-n-p AlGaAs/GaAs heterojunction bipolar transistors: A theoretical analysis

The AlGaAs/GaAs P-n-p heterojunction bipolar transistor (HBT) is shown by a simple analysis to exhibit millimeter wave and digital switching performance comparable to similar N-p-n structures. For example, a P-n-p HBT with a 1-µm emitter stripe and 34-µm2total area yieldsfτ = 31GHz,fₘₐₓ = 94GHz, and an intrinsic switching speedτₛ = 8ps. A similar N-p-n structure exhibitsfτ = 56GHz,fₘₐₓ = 102GHz, andτₛ = 8ps.