InAs/GaSb composite quantum wells sandwiched by AlSb are studied by using capacitance-voltage, quantum Hall, and three-terminal transfer measurements. Our data reveal a positive energy gap resulting from the hybridization of in-plane dispersions of electrons in InAs and holes in GaSb for conventionally recognized ``semimetallic'' InAs/GaSb heterostructures.
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Yang et al. (1997) studied this question.
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