Multilevel cell is an important concept to improve the density of spin transfer torque memory. We demonstrated two-bit multilevel cell spin transfer switching using MgO-based magnetic tunnel junctions. Two types of cell structural design are discussed. Multiple resistance levels are depicted in a current-driven spin transfer switching loop, which shows a switching current density of ∼2×106A∕cm2. Reversible transitions between high and low states of the soft bit are achieved using minor-loop spin transfer switching. The influence of external magnetic field to spin transfer switching is also discussed.
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Lou et al. (2008) studied this question.
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