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Spin dependent tunneling (SDT) devices have been fabricated using standard photolithographic techniques. The SDT film was RF sputtered NiFeCo(125 /spl Aring/)/Al/sub 2/O/sub 3/(20 /spl Aring/)/CoFe. Device resistances ranged from 1 K/spl Omega/ to 12.9 K/spl Omega/ for device areas of 1000 /spl mu/m/sup 2/ (10 /spl mu/m X 100 /spl mu/m) to 84.5 /spl mu/m/sup 2/ (6.5 /spl mu/m X 13 /spl mu/m), respectively. Peak GMR was over 4% at low bias with saturation fields around 10 Oe. Hard layer switching fields were about 50 Oe. Memory operation was demonstrated using integrated metallization for supplying read/write fields.
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Beech et al. (1996) studied this question.
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