Photon drag detection in p-type silicon

Experimental measurements of the spectral responsivity of (100) and (111) orientated, p-type silicon has been made, using HF, HCl, HBr, H 2 O and CO 2 lasers, in the 2.5-33 mu m range. The high responsivity observed at 33 mu m is explained by reference to the band structure of p-type silicon.