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We have calculated, within the effective-mass approximation, the current-density--voltage and current-density--magnetic-field characteristics of Alₓ{Ga}_{1{{-}}x}$As/GaAs double-barrier quantum-well systems, in the presence of a magnetic field parallel to the current. Inelastic-scattering broadening is included by means of a simple model. This new picture of the problem is able to explain the disagreements between experimental results and previous calculations.
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Schulz et al. (1990) studied this question.
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