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The thermal behavior of lasers based on In0.5Ga0.5/As/GaAs self-aggregated quantum dots is investigated. Increasing temperature from 10 to 290 K produces a narrowing of the dot laser mode distribution. This effect is explained in terms of carrier relaxation between dots and carrier thermal escape from dots to nonradiative recombination centers. The thermal dependence of the threshold current and the differential quantum efficiency is also discussed.
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Patanè et al. (1999) studied this question.
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