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The formation of SiC in silicon wafer by 1.5 MeV C+ implantation to doses of 1.5×1018 ions/cm2 followed by annealing is demonstrated using infrared absorption spectra and Rutherford backscattering (RBS). From the results of He+ backscattering under the channeling condition, the surface layer of Si is observed to remain crystalline even before annealing.
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Chayahara et al. (1992) studied this question.
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