GaAs/AlGaAs heterostructures systematically doped with additional Be or Si impurities near the two-dimensional electron gas show distinct shifts of the quantum Hall plateaus and of the minima in the longitudinal resistivity ρₓₓ relative to the expected values of the Landau-level filling factor. A quantum Hall plateau ρxy=h/e² which does not cross the classical straight line ρxy⁰=B/nₛe is observed. The results are explained by a microscopic transport calculation emphasizing non-Born scattering of electrons by individual impurities.
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Haug et al. (1987) studied this question.
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