Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation P. E. Schmid, P. S. Ho, T. Y. Tan; Summary Abstract: Correlation between Schottky barrier height and phase stoichiometry/structure of silicide–silicon interfaces. Journal of Vacuum Science and Technology 1 March 1982; 20 (3): 688–689. https://doi.org/10.1116/1.571629 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAVS: Science & Technology of Materials Interfaces and ProcessingJournal of Vacuum Science and Technology Search Advanced Search |Citation Search
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Schmid et al. (1982) studied this question.
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