We report on the super-lattice castellated field-effect transistor (SLCFET) device architecture whose unique geometry enables new scaling and optimization strategies for RF power and performance. Measured transistor values show excellent potential for both power and low-noise amplification applications. With IDS> 1.8 A/mm, fT= 47 GHz, and fmax= 124 GHz, we are able to demonstrate Pout6 W/mm, PAE 45%, and OIP3/PDC = 6 dB at 30 GHz.
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Chang et al. (2019) studied this question.
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