Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
June 1, 1985IEEE Electron Device Letters

Multiple-channel GaAs/AlGaAs high electron mobility transistors

View Full Paper
Ask AI
Bookmark
Share

Authors

NSN.H. ShengAnhui Polytechnic UniversityCLC.P. LeeRCR.T. ChenRockwell Automation (United States)

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Sheng et al. (1985) studied this question.

synapsesocial.com/papers/6a887bfbb98a632b5e4fe2b9https://doi.org/10.1109/edl.1985.26134
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Characteristics of modulation-doped Al<i>x</i>Ga1−<i>x</i>Al/GaAs field-effect transistors: Effect of donor-electron separation1983 · 22 citations
  2. 2Concentration of electrons in selectively doped GaAlAs/GaAs heterojunction and its dependence on spacer-layer thickness and gate electric field1984 · 89 citations
  3. 3Modulation-doped GaAs/AlGaAs heterojunction field-effect transistors (MODFET's), ultrahigh-speed device for supercomputers1984 · 160 citations
  4. 4A New Highly-Conductive (AlGa)As/GaAs/(AlGa)As Selectively-Doped Double-Heterojunction Field-Effect Transistor (SD-DH-FET)1984 · 63 citations