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August 1, 1984Applied Physics Letters

Concentration of electrons in selectively doped GaAlAs/GaAs heterojunction and its dependence on spacer-layer thickness and gate electric field

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KHKazuhiko HirakawaThe University of TokyoHSH. SakakiUniversity of Notre DameJYJunji YoshinoThe University of Tokyo

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Hirakawa et al. (1984) studied this question.

synapsesocial.com/papers/6a887bfbb98a632b5e4fe2bahttps://doi.org/10.1063/1.95202
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