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February 1, 1982Japanese Journal of Applied PhysicsOpen Access

A New AlGaAs/GaAs Heterojunction FET with Insulated Gate Structure (MISSFET)

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Authors

THTakashi HottaUniversity of MichiganHSH. SakakiUniversity of Notre DameHOHideo OhnoTohoku Institute of Technology

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Hotta et al. (1982) studied this question.

synapsesocial.com/papers/6a88427170b8c970d976ec4chttps://doi.org/10.1143/jjap.21.l122
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