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February 1, 1983Applied Physics Letters

Characteristics of modulation-doped AlxGa1−xAl/GaAs field-effect transistors: Effect of donor-electron separation

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Authors

TDT. J. DrummondUniversity of GroningenRFR. FischerAT&T (United States)SSS. L. SuUniversity of Illinois Urbana-Champaign

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Drummond et al. (1983) studied this question.

synapsesocial.com/papers/6a887bb7a082a64c2914cdf2https://doi.org/10.1063/1.93908
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