Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
January 21, 1982Electronics Letters

Planar enhancement mode two-dimensional electron gas FET associated with a low AlGaAs surface potential

View Full Paper
Ask AI
Bookmark
Share

Authors

DDD. DelagebeaudeufTechnicolor (France)MLM. LavironCentre National de la Recherche ScientifiquePDP. DelescluseCentre National de la Recherche Scientifique

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Delagebeaudeuf et al. (1982) studied this question.

synapsesocial.com/papers/6a887bfcb98a632b5e4fe2bdhttps://doi.org/10.1049/el:19820070
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 3 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Low-noise two-dimensional electron gas FET1981 · 33 citations
  2. 2High Electron Mobility Transistor Logic1981 · 122 citations
  3. 3Metal-(n) AlGaAs-GaAs two-dimensional electron gas FET1982 · 599 citations