We demonstrate the first metal-semiconductor field-effect transistor with a self-assembled planar lang110rang GaAs nanowire channel. Well-defined dc output and transfer characteristics have been observed with a subthreshold slope of ~150 mV/dec, maximum gmof 23 mS/mm, and excellent on-current saturation. Bulklike mobility of ~4100 cm2/Vmiddots with corresponding electron concentration of 2.3middot1017cm-3is derived by fitting the experimental data using a self-consistent long channel field effect device model.
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Fortuna et al. (2009) studied this question.
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