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The first- and second-order resonant Raman scattering of a thin-layer GaAs/AlAs superlattice has been studied over a wide incident-photon-energy range. The exponential energy dependence of the ratio between the GaAs and AlAs LO-phonon modes was observed. The qualitative origin of this behavior is found to be connected with the way the excited electron-hole pair is alternatively coupled to the GaAs and AlAs phonon fields.
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Gridin et al. (1988) studied this question.
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