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The effect of disorder caused by MeV heavy ion irradiation on the tunnel magnetoresistance (TMR) of magnetic tunnel junctions is investigated. Two types of tunnel junctions, viz. Co/Al2O3/Ni80Fe20 and Co/Gd-doped Al2O3/Ni80Fe20 are studied. Upon 70 MeV Si ion irradiation at a fluence of ions/cm2, the undoped junctions show relatively small but irreversible change, while the Gd-doped junctions show a huge reduction, in TMR. In both cases junctions were completely destroyed by 200 MeV Ag ion irradiation at a fluence of ions/cm2. The results are attributed to the modification of the barrier and the neighboring interfaces caused by the high energy density deposited by incident ions.
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Banerjee et al. (2005) studied this question.
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