Answers are grounded in this paper and cite their sources.
An advanced commercial 2Gbit NAND flash memory (90 nm technology, one bit/cell) has been characterized for TID and heavy ion SEE. Results are qualitatively similar to previous flash results in most respects, but we also detected a new dynamic failure mode
No takes yet. Share an insight, caveat, or question.
Oldham et al. (2006) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: