Photoluminescence studies of the neutralization of acceptors in silicon by atomic hydrogen

A number of recent electrical transport studies have shown that low-temperature treatment in plasmas containing atomic H can neutralize acceptors in Si. We have studied this process by monitoring the bound exciton luminescence associated with the implanted acceptor impurities B, In, and Tl. Treatment in an atomic H plasma was found to substantially reduce the acceptor bound exciton luminescence while leaving unchanged the lines due to an implanted donor, As, thus verifying the conclusions of the transport studies.