The influence of hydrogen on the lattice constant of boron-doped crystalline silicon is studied by x-ray diffraction. It is found that hydrogen passivation of the boron acceptors is accompanied by a noticeable expansion of the passivated layer. A value of +(2.5±0.5)×10−24 cm3/atom is obtained for the expansion coefficient due to B-H complexes.
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Stutzmann et al. (1988) studied this question.
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