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High-purity silicas synthesized by various manufacturing methods were studied by electron-spin resonance after being irradiated by ArF excimer laser (6.4 eV) at room temperature. E' centers (?Si{·}) are induced in all samples, while nonbridging oxygen hole centers (?Si-O{·}) appear only in oxygen-surplus silicas and in a sample which has an absorption band at 5.1 eV. The concentration of E' centers varies from sample to sample, ranging between 10¹⁴ and 10¹⁶ spins/cm³ for the exposure at the average power density of 28 mJ/cm² per pulse at 15 Hz for 1 h. The sample dependence regarding the species and concentrations of photoinduced defects is well explained in terms of transformation of preexisting precursors to paramagnetic defects through a two-photon-absorption process.
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Nishikawa et al. (1990) studied this question.
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