A new oxide-trap based on charge-pumping (OTCP) extraction method for irradiated MOSFET devices: part I (high frequencies)

In this paper, we propose a new extraction method of radiation-induced oxide-trap density (/spl Delta/N/sub ot/), called Oxide-Trap based on Charge-Pumping (OTCP). This part presents the HF-OTCP method, which relies on high-frequency (HF) standard charge-pumping measurement. By applying an HF gate voltage signal, we avoid the border-trap effect in CP current (I/sub cp/) measurements. Hence, I/sub cp/ will be only due to the interface-trap contribution. We establish, using the HF-OTCP method, that /spl Delta/N/sub ot/ is only dependent on /spl Delta/V/sub th/ (threshold voltage shift) and /spl Delta/I/sub cpm/ (increase of maximum CP current), where /spl Delta/I/sub cpm/ is caused by radiation-induced interface-trap increase (/spl Delta/N/sub it/). We also clearly show that /spl Delta/V/sub th/ and /spl Delta/I/sub cpm/ can be obtained from lateral and vertical shifts of Elliot's charge-pumping curves, respectively. Thus, this new procedure allows the determination of /spl Delta/N/sub ot/ without needing any additional techniques. Finally, this procedure can be used in rapid hardness assurance test to evaluate both radiation-induced oxide and interface traps.