As a prerequisite of biaxial zero creep experiments, a novel sensitive apparatus is developed for real-time film-stress measurement during thermal cycles. The optical sensor with a fixed multi-beam emitter and a CCD detector is investigated during an annealing process of Ag/Co multilayer thin film. The monitoring plots of stress as functions of temperature and time demonstrate the capability of this set-up. The typical sensitivity for measuring the wafer curvature radius is 2 km.
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An et al. (2003) studied this question.
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