A laser-based technique for measuring the curvature of a multilayer/substrate couple is described. Unlike most wafer curvature systems, the instrument described measures the local curvature of the multilayer/substrate couple, correcting for the local topography of the substrate, rather than measuring changes in the average curvature of the multilayer/substrate couple. The apparatus has been designed specifically to perform biaxial zero-creep measurements at elevated temperatures in vacuum. It can also be used to examine the development of biaxial stresses during thermal cycling of thin films deposited on substrates.
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Mann et al. (2002) studied this question.
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