Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
July 1, 1988IEEE Transactions on Electron Devices

Velocity overshoot in ultra-short-gate-length GaAs MESFETs

View Full Paper
Ask AI
Bookmark
Share

Authors

GBG. BernsteinUniversity of Notre DameDFD. K. FerryArizona State University

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Bernstein et al. (1988) studied this question.

synapsesocial.com/papers/6a9451ca175d68f85fc578f8https://doi.org/10.1109/16.3340
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1GaAs microwave devices and circuits with submicron electron-beam defined features1983 · 7 citations
  2. 2Very short gate-length GaAs MESFET's1985 · 36 citations
  3. 3Millimeter-wave performance of ultrasubmicrometer-gate field-effect transistors: A comparison of MODFET, MESFET, and PBT structures1987 · 53 citations
  4. 4Quarter micron low noise GaAs FET's1982 · 36 citations
  5. 5Electron-beam lithography in n+self-aligned GaAs MESFET fabrication1983 · 19 citations