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December 7, 2009Japanese Journal of Applied Physics

Novel Stack Structure of Magnetic Tunnel Junction with MgO Tunnel Barrier Prepared by Oxidation Methods: Preferred Grain Growth Promotion Seed Layers and Bi-layered Pinned Layer

Young-suk Choi Hiroshi Tsunematsu S. Yamagata Hiroki Okuyama Yoshinori Nagamine K. Tsunekawa

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Abstract

Novel Stack Structure of Magnetic Tunnel Junction with MgO Tunnel Barrier Prepared by Oxidation Methods: Preferred Grain Growth Promotion Seed Layers and Bi-layered Pinned Layer, Choi, Young-suk, Tsunematsu, Hiroshi, Yamagata, Shinji, Okuyama, Hiroki, Nagamine, Yoshinori, Tsunekawa, Koji

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Cite This Study

Choi et al. (2009) studied this question.

synapsesocial.com/papers/6a94525fdc612b2bd1707360 https://doi.org/10.1143/jjap.48.120214

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Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

1230% room-temperature magnetoresistance in CoFeB∕MgO∕CoFeB magnetic tunnel junctionsOriginal Research · 2005 · 967 citations
2Transmission electron microscopy study on the polycrystalline CoFeB∕MgO∕CoFeB based magnetic tunnel junction showing a high tunneling magnetoresistance, predicted in single crystal magnetic tunnel junctionOriginal Research · 2007 · 68 citations
3Magnetoresistance measurement of unpatterned magnetic tunnel junction wafers by current-in-plane tunnelingOriginal Research · 2003 · 238 citations
4Spin-tunnel-junction thermal stability and interface interdiffusion above 300 °COriginal Research · 2000 · 128 citations
5Three-dimensional atom probe investigation of boron distribution in CoFeB∕MgO∕CoFeB magnetic tunnel junctionsOriginal Research · 2008 · 42 citations

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