Dynamic Thermomagnetic Writing in Tunnel Junction Cells Incorporating Two GeSbTe Thermal Barriers

Magnetic tunnel junctions (MTJs) incorporating GeSbTe thermal barriers and weakly pinned free layers (Hex~60Oe) have been produced with areas between 1times1 mum2and 3times8 mum2. Current pulses lasting from 100 mus down to 20 ns were used to heat the MTJs and reverse the free layer pinning field. It is demonstrated that pulses with 7 mW/mum2can be used to switch the free layer of MTJs incorporating GeSbTe (20 mW/mum2without GeSbTe). The dependence of the power required to switch the MTJs is studied with respect to sample area, pulse duration, and GeSbTe thickness