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Formulas are derived for the effective mean value and effective excess-noise factor associated with dark-current induced hole-electron pairs and these are used to study the influence of dark current, and residual hole ionisation on device and receiver performance for superlattice avalanche photodiodes (APDs). The analyses should provide useful guidelines for the design of high performance superlattice APDs and receivers.
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O’Reilly et al. (1988) studied this question.
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