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Epitaxial (Fe,Mn)(3)O(4) (FMO) ferromagnetic oxide artificial nanowire (NW) structures were deposited across Pt/Cr bilayer electrodes with a high controllability on their shape and positioning by using atomic force microscope (AFM) lithography with molybdenum (Mo) lift-off in combination with a pulsed laser deposition technique. The oxide wire widths were systematically controlled from 5 microm down to 100 nm by controlling AFM lithography current for Mo-mask. The resistivity of FMO-NW structures was increased at below around 400 nm in width. Magnetic force microscope revealed that FMO-NW with 120 nm showed single line of aligned ferromagnetic domains that caused the resistivity increase. Our results offer well-defined epitaxial transition metal oxide nanostructures with a remarkable flexibility toward nanoscale oxide spintronics.
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Goto et al. (2009) studied this question.
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