Atomic-Scale Mechanisms for Low-NIEL Dopant-Type Dependent Damage in Si

While calculated non-ionizing energy loss (NIEL) generally correlates well to first order with radiation-induced displacement damage rates, it does not account for some well-known differences in damage rates for n- and p-type Si. Here we show that the magnitude of these differences, DeltaKn-p, correlates closely with the fraction of total displacement damage due to low-energy primary knock-on atom (PKA) recoils. The primary products of these displacement damage events, with PKA recoilsn-p