The temperature dependence of threshold current Ithin vertical-cavity surface-emitting lasers (VCSELs) can be approximated by the equation Ith(T)=alpha+beta(T-Tmin)2, where Tminis the temperature of lowest Ith,alpha and beta are parameters, and temperature is T. We compare the temperature dependence of threshold current in VCSELs with GaAs, InGaAs, and strain compensated InGaAs-GaAsP quantum wells. From our analysis we find the coefficient beta is related to the gain properties of the quantum well, and is shown to serve as a benchmark for the VCSEL temperature sensitivity. The incorporation of strain-compensated high-barrier GaAsP layers in the active region of 980-nm VCSELs is demonstrated to reduce the threshold dependence on temperature
No takes yet. Share an insight, caveat, or question.
Chen et al. (2006) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: