Photovoltage generation was observed for C60/Si heterojunction fabricated by the deposition of C60 thin film on Si substrate. Four types of Si substrates (two for p-type and two for n-type) were used. All junctions showed rectifying behaviors and photovoltage generation under illumination of Ar-ion laser. The highest value of the photovoltage was 0.40 V. From the saturated photovoltage values for four junctions, the Fermi level of C60 thin film was estimated to be located about 4.7 eV below the vacuum level.
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Kita et al. (1996) studied this question.
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