Measurement of Frequency Dispersion of AlGaN/GaN High Electron Mobility Transistors

Frequency dispersion of the drain conductance was observed in AlGaN/GaN high electron mobility transistors (HEMTs). The transition frequency shifted to higher frequencies with increasing temperature. The activation energy for the change of the transition frequency was 0.47 eV, which was almost the same as that obtained by the measurement of the temperature dependence of the low-frequency noise.