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December 1, 2005Japanese Journal of Applied PhysicsOpen Access

Effect of Epitaxial Layer Crystal Quality on DC and RF Characteristics of AlGaN/GaN Short-Gate High-Electron-Mobility Transistors on Sapphire Substrates

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Authors

KSKenji ShiojimaUniversity of FukuiTMT. MakimuraTSTetsuya SuemitsuTohoku University

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Shiojima et al. (2005) studied this question.

synapsesocial.com/papers/6a945b484ec1eb7af13ed96bhttps://doi.org/10.1143/jjap.44.8435
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Also Consider

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  1. 1AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy2001 · 334 citations
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  3. 3Characterization of Different-Al-Content AlGaN/GaN Heterostructures and High-Electron-Mobility Transistors Grown on 100-mm-Diameter Sapphire Substrates by Metalorganic Vapor Phase Epitaxy2004 · 24 citations
  4. 4Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures2001 · 160 citations
  5. 5Comparison of high field electron transport in GaN and GaAs1997 · 177 citations