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December 9, 2004Japanese Journal of Applied Physics

Characterization of Different-Al-Content AlGaN/GaN Heterostructures and High-Electron-Mobility Transistors Grown on 100-mm-Diameter Sapphire Substrates by Metalorganic Vapor Phase Epitaxy

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Authors

MMMakoto MiyoshiNagoya Institute of TechnologyMSMasahiro SakaiMuroran Institute of TechnologySAS. ArulkumaranNagoya University

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Miyoshi et al. (2004) studied this question.

synapsesocial.com/papers/6a9e094f031501fc02c7cc49https://doi.org/10.1143/jjap.43.7939
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