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March 1, 1994Semiconductor Science and Technology

Fabrication of GaN nanostructures by a sidewall-etchback process

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Authors

S. J. Pearton
S. J. PeartonUniversity of StuttgartFRF. RenLinköping UniversityCAC. R. AbernathyAT&T (United States)

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Pearton et al. (1994) studied this question.

synapsesocial.com/papers/6a945b8b5cc4cfd2f72dd64fhttps://doi.org/10.1088/0268-1242/9/3/015
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Also Consider

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