Single‐photon emission from a further confined InGaN/GaN quantum disc via reverse‐reaction growth

We demonstrate high-purity single-photon emission from a high-quality and further confined InGaN (indium gallium nitride) quantum disc in a GaN (gallium nitride) nanowire fabricated by an unconventional and versatile reverse-reaction fabrication method. This further confined structure exhibits single-photon emission with a g(2)(0) value of 0.11 at 8 K with a sub-nanosecond radiative lifetime. The formation of the further confined structure using this versatile reverse-reaction fabrication approach overcomes many limitations in conventional self-assembled III-nitride nanowires and, thus, exhibits a strong potential application as a high-purity single-photon source.