Trap evaluations of metal/oxide/silicon field-effect transistors with high-k gate dielectric using charge pumping method

The interface trap properties of metal/oxide/silicon field-effect transistors with high-k gate dielectrics are evaluated by the charge pumping method and related with electrical characteristics of the transistors. It is found that the gate leakage current is very sensitive to the interface traps by which the barrier height of Fowler–Nordheim tunneling is also influenced. The inversion layer mobility is greatly influenced by the charges in the gate insulator as well as by the interface traps. We propose a simple method to extract the geometrical mean value of capture cross sections of traps ranging from 7.03×10−21 to 2.22×10−22 cm2.