Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
May 15, 1997Journal of Applied Physics

Leakage currents in amorphous Ta2O5 thin films

View Full Paper
Ask AI
Bookmark
Share

Authors

FCFu‐Chien ChiuMing Chuan UniversityJWJenn-Jyh WangJLJoseph Ya-min LeeNational Tsing Hua University

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Chiu et al. (1997) studied this question.

synapsesocial.com/papers/6a7d65cdf1daba58ecd5b8cbhttps://doi.org/10.1063/1.365252
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Formation of high-quality, magnetron-sputtered Ta2O5 films by controlling the transition region at the Ta2O5/Si interface1987 · 19 citations
  2. 2Investigation on Leakage Current Reduction of Photo‐CVD Tantalum Oxide Films Accomplished by Active Oxygen Annealing1992 · 100 citations
  3. 3Chemical Vapor Deposition of Tantalum Pentoxide Films for Metal‐Insulator‐Semiconductor Devices1976 · 52 citations
  4. 4Structural and Electrical Properties of Ta2O5 Grown by the Plasma-Enhanced Liquid Source CVD Using Penta Ethoxy Tantalum Source1993 · 73 citations
  5. 5Electrical Characteristics of the RF Magnetron‐Sputtered Tantalum Pentoxide‐Silicon Interface1984 · 20 citations