We demonstrate GaN-based semipolar (2021¯) laser diodes (LD) in the green region of the spectrum. 505 nm lasing was observed under pulsed operation, with a threshold current density (Jth) of 27.5 kA/cm2 and a threshold voltage (Vth) of 15.5 V. The blueshift of spontaneous emission was less than 5 nm when varying the injection current level from 125 A/cm2 to threshold. Simulations show that the reduced blueshift can be attributed to the minimal dependence of the energy potential profile in the active region on the applied bias and current injection level.
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Huang et al. (2011) studied this question.
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