We report the development of 480 nm cyan and 520 nm green light emitting diodes (LEDs) with a highly stable emission wavelength. The shift is less than 3 nm when the drive current density is changed from 0.1 to 38 A/cm2. LEDs have been obtained in GaInN-based homoepitaxy on nonpolar m-plane GaN bulk substrates. For increasing emission wavelength we find a large number of additional dislocations generated within the quantum wells (2×108 to ∼1010 cm2) and a decrease in the electroluminescence efficiency. This suggests that the strain induced generation of defects plays a significant role in the performance limitations.
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Detchprohm et al. (2010) studied this question.
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