The influence of boron dopants and oxygen impurity on lattice parameters of Si single crystals is studied. Concentrations of boron and oxygen were determined by the Bond method. A linear contraction of the crystal lattice was observed due to high boron doping of Si single crystals. Lattice parameters of Si single crystals increased below the lower limit boron concentration NB = 2.1 × 1016 cm‐3. This proves the presence oxygen at low boron concentrations. In highly boron‐doped Si single crystals no oxygen influence on lattice parameter change was observed. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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